pseudo-square multi c-Si ingot, 8 inch

GrowthMethod

DSS

ConductivityType

P type

Dopant

Boron

Resistivity

0.5~3Ω.cm，3~6Ω.cm

GradeType

6N

Life Time

≥2μs

Diagonal

200±0.3 mm

Cross Section Side Length

156±0.5mm

Oxygen Concentration oncentration

≤5.0×1017

Angle between adjacent sides

90±0.3°

Carbon

≤1.0×1018

Surface Condition

Smooth,nocrack ,no scratch